Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system

Authors
Hartley, JG Groves, TR
Citation
Jg. Hartley et Tr. Groves, Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system, J VAC SCI B, 17(6), 1999, pp. 2932-2935
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
6
Year of publication
1999
Pages
2932 - 2935
Database
ISI
SICI code
1071-1023(199911/12)17:6<2932:COGMWA>2.0.ZU;2-7
Abstract
The IBM EL4+mask writer, located in the Advanced Mask Facility in Burlingto n, Vermont has recently been used to investigate chrome on glass lithograph y at 75 kV with a current density of 60 A/cm(2). One of the main concerns w ith doing lithography at high beam voltages on a quartz substrate is the ef fect of beam heating on the resist. Using ZEP7000 resist on both quartz gla ss and silicon wafer substrates, we have characterized image size control f rom 0.1 to 3 mu m for a large range of pattern geometries. (C) 1999 America n Vacuum Society. [S0734-211X(99)10706-6].