Image formation in extreme ultraviolet lithography and numerical aperture effects

Authors
Bollepalli, SB Khan, M Cerrina, F
Citation
Sb. Bollepalli et al., Image formation in extreme ultraviolet lithography and numerical aperture effects, J VAC SCI B, 17(6), 1999, pp. 2992-2997
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
6
Year of publication
1999
Pages
2992 - 2997
Database
ISI
SICI code
1071-1023(199911/12)17:6<2992:IFIEUL>2.0.ZU;2-1
Abstract
The problem of image formation in extreme ultraviolet lithography from the mask to the wafer is studied by physical modeling along with computer simul ations. The reflective properties of multilayer mirrors and some of The dem ands that they impose upon the optical system design for accurate replicati on of mask patterns is discussed. Numerical aperture size effects in relati on to the critical dimension at the wafer is presented along with several i llustrative examples. (C) 1999 American Vacuum Society. [S0734-211X(99)1870 6-7].