Novel method for silicon quantum wire transistor fabrication

Local stress-limited oxidation was used to fabricate silicon quantum wire t ransistors with a channel diameter of 5 nm. The oxidation of source and dra in regions was prevented with a silicon nitride diffusion barrier. A novel wraparound gate was used to improve the gate control of the potential in th e channel. The electrical properties of these devices were investigated at room temperature. Ideal subthreshold behavior, with the subthreshold swing equal to 60.3 mV/dec, was observed. (C) 1999 American Vacuum society. [S073 4-211X(99)16906-3].