Study of resolution limits due to intrinsic bias in chemically amplified photoresists

Authors
Postnikov, SV Stewart, MD Tran, HV Nierode, MA Medeiros, DR Cao, T Byers, J Webber, SE Wilson, CG
Citation
Sv. Postnikov et al., Study of resolution limits due to intrinsic bias in chemically amplified photoresists, J VAC SCI B, 17(6), 1999, pp. 3335-3338
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
6
Year of publication
1999
Pages
3335 - 3338
Database
ISI
SICI code
1071-1023(199911/12)17:6<3335:SORLDT>2.0.ZU;2-J
Abstract
This article presents experimental results that suggest that classical Fick ian diffusion cannot account for any significant fraction of the critical d imension bias observed in chemically amplified photoresists. A transport me chanism based on reaction front propagation is proposed as a possible expla nation for the experimental observations. (C) 1999 American Vacuum Society. [S0734-211X(99)18206-4].