Theory of the (3 x 2) reconstruction of the GaAs(001) surface

We discuss an ab initio density functional theory investigation of a (3 x 2 ) reconstruction of the Ga-rich GaAs(001) surface. Recent experiments ident ified this new reconstruction as a stable surface of epitaxially grown GaAs doped with indium or carbon (L. Li, et al., Appl. Phys. A 66 (1998) S501; L. Li, et al., Ultramicroscopy 73 (1998) 229). Using our recently developed real-space pseudopotential density functional code, we investigate this (3 x 2) reconstruction and evaluate stabilization mechanisms for the model pr oposed by the experimentalists, which does not satisfy the electron countin g rule. In order to study the effect of In substitution, we consider the de pendence of the surface energies of competing reconstructions on surface st rain and relative chemical potentials. The effects of carbon substitution a re modeled using a charged (3 x 2) reconstruction. These studies support an d clarify the proposed structure and stabilization mechanisms. We provide a simple physical explanation for the behavior of the surface energy of the (3 x 2) reconstruction. (C) 1999 Elsevier Science S.A. All rights reserved.