Semiconductor alloys for monolithic integration with Si microelectronics

We introduce a novel class of semiconductors which is optically active and solves the problems with lattice-constant mismatches and polarity mismatche s that are normally an issue in heteroepitaxial growth of III-V alloys on s ilicon substrates. Using ab initio total energy calculations and quasi-part icle GW calculations we examine physical properties of various configuratio ns of these novel materials and identify a particular suitable configuratio n. This configuration is lattice-constant matched to Si and has a direct ba nd gap very close to the operating wavelength of optical fibers. Therefore, this novel class could lead to monolithic integration of optical materials and Si circuits. (C) 1999 Elsevier Science S.A. All rights reserved.