Reliability investigation of InGaP/GaAs HBTs under current and temperaturestress

The reliability of InGaP/GaAs N-p-n heterojunction bipolar transistors (HBT s) with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB2/Au) under current and temperature stress is studied in t his paper. We further report results of current stress on three p-GaAs dopi ng Impurities namely Zn, Be and C. The effect of O+/H+ and O+/He+ ions, use d in the fabrication of planar self-aligned HBTs, is also investigated in t he stability of device de current gain, The instability phenomena typical o f each factors and their effects on the HBT characteristics are reported. ( C) 1999 Elsevier Science Ltd, All rights reserved.