Sensitivity of multimode bidirectional optoelectronic modules to electrostatic discharges

Human Body Model ESD tests on two commercially available different types of wavelength division multiplexing bidirectional optoelectronic modules, int ended for data transmission over multimode optical fibers at 820 and 1320 n m wavelengths, have been performed. These bidirectional modules incorporate d pin diode receivers and light emitting diode in a single package. In part icular, the 820 nm light emitting diodes had rather high damage threshold p ulse amplitudes of about + 10,000 V under forward bias and -5000 V under re verse bias conditions, and no active layer degradation has been observed. I n-situ measurements of the optical transients emitted during forward bias E SD pulses enabled a damage pulse threshold detection of a LED without the n eed of further optoelectronic characterization. The receiver photodiodes, h owever, were very sensitive to reverse bias ESD pulses. The InGaAs photodio des degraded during ESD pulses with amplitudes as low as -150 V and in the case of the Silicon photodiodes as low as -175 V. (C) 1999 Elsevier Science Ltd. All rights reserved.