Review of reliability issues of metal-semiconductor-metal and avalanche photodiode photonic detectors

In this paper, we present a brief review of the principal mechanisms that i nfluence the reliability of metal-semiconductor-metal (MSM) interdigitated photodetectors and avalanche photodiodes (APD). The most important mechanis m influencing reliability in these devices is the dark current, However, ot her mechanisms such as edge and microplasmic breakdown and electrode degrad ation, can also affect device reliability. In this study, we describe numer ical simulation techniques that can be utilized to understand the workings of some of these mechanisms and illustrate their usage in a few representat ive devices. Specifically, we discuss how advanced drift-diffusion and hydr odynamic simulation techniques can be used to study the dark current as wel l as the location of breakdown in MSM and APD devices. (C) 1999 Elsevier Sc ience Ltd. All rights reserved.