Bipolar model extension for MOS transistors considering gate coupling effects in the HEM ESD domain

The presented compact model for NMOS transistors combines both the high-cur rent bipolar mode and the MOS mode considering modulation of the current ga in beta and gate coupling effects. For the studied 0.35 mu m-CMOS devices, measurement and simulation correlate very well with respect to layout varia tions, fulfilling a prerequisite for the simulation guided synthesis and op timization of ESD protection structures and schemes. The open model interfa ce also allows the use of existing proprietary MOS-models. (C) 1999 Elsevie r Science Ltd. All rights reserved.