Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing

Citation
C. Russ et al., Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing, MICROEL REL, 39(11), 1999, pp. 1551-1561
Citations number
22
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
11
Year of publication
1999
Pages
1551 - 1561
Database
ISI
SICI code
0026-2714(199911)39:11<1551:NTOGIB>2.0.ZU;2-9
Abstract
The triggering of grounded-gate nMOS transistors and field-oxide devices, e ssential for optimized protection design, is addressed by transmission line pulser (TLP)-pulsed emission microscopy. Current non-uniformity and instab ility effects in snapback operation under DC and TLP conditions are demonst rated. The comprehensive correlation of emission and electrical behavior al lows an improved interpretation of device operation. Technological influenc es on the trigger uniformity are discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.