Investigations on the thermal behavior of interconnects under ESD transients using a simplified thermal RC network

Citation
P. Salome et al., Investigations on the thermal behavior of interconnects under ESD transients using a simplified thermal RC network, MICROEL REL, 39(11), 1999, pp. 1579-1591
Citations number
21
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
39
Issue
11
Year of publication
1999
Pages
1579 - 1591
Database
ISI
SICI code
0026-2714(199911)39:11<1579:IOTTBO>2.0.ZU;2-D
Abstract
This work focuses on the interconnect heating during fast ESD transients. A simplified thermal RC network is used to study the behavior of interconnec ts and to predict their failures, which can be an open circuit or a latent failure due to the decrease of the electromigration lifetime. The RC model is validated by both experiments and finite difference simulations. We obse rve that the melting of the interconnect system can be considered as instan taneous. Simulations in both solid and liquid phase of the metal are in goo d agreement with experiments. HBM and MM transients are investigated and a relationship to correlate these ESD stresses with the TLP measurements is s tudied in depth. We show that a square pulse of 80 ns may be used to predic t an HBM stress and a 45 ns pulse is proposed for MM. (C) 1999 Elsevier Sci ence Ltd. All rights reserved.