We report on a new method to build suspended silicon nanowires in highly do
ped silicon films in silicon-on-insulator substrates. The beams are defined
by high-resolution, low-energy electron-beam lithography using a two-layer
positive electron resist. Micromachining techniques including dry and wet
etching are applied to pattern the structures. We show first low-temperatur
e measurements of these novel devices indicating electron-phonon interactio
n.