Suspending highly doped silicon-on-insulator wires for applications in nanomechanics

Citation
L. Pescini et al., Suspending highly doped silicon-on-insulator wires for applications in nanomechanics, NANOTECHNOL, 10(4), 1999, pp. 418-420
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOTECHNOLOGY
ISSN journal
09574484 → ACNP
Volume
10
Issue
4
Year of publication
1999
Pages
418 - 420
Database
ISI
SICI code
0957-4484(199912)10:4<418:SHDSWF>2.0.ZU;2-T
Abstract
We report on a new method to build suspended silicon nanowires in highly do ped silicon films in silicon-on-insulator substrates. The beams are defined by high-resolution, low-energy electron-beam lithography using a two-layer positive electron resist. Micromachining techniques including dry and wet etching are applied to pattern the structures. We show first low-temperatur e measurements of these novel devices indicating electron-phonon interactio n.