Many-body effects in carrier capture and energy relaxation in self-organized InAs/GaAs quantum dots

Citation
Zl. Yuan et al., Many-body effects in carrier capture and energy relaxation in self-organized InAs/GaAs quantum dots, PHYSICA B, 272(1-4), 1999, pp. 12-14
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
12 - 14
Database
ISI
SICI code
0921-4526(199912)272:1-4<12:MEICCA>2.0.ZU;2-R
Abstract
We have measured carrier dynamics in self-organized InAs/GaAs quantum dots using femtosecond time-resolved photoluminescence. The observation of inten sity building up sequentially from the lower states is attributed to fast t rapping and intra-dot relaxation; the dependence of population risetimes on carrier density indicates that relaxation is governed by carrier-carrier s cattering. Strong many-body effects are also observed at high excitation de nsities. (C) 1999 Elsevier Science B.V. All rights reserved.