Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

We fabricated and characterized planar quantum dot devices with a single se lf-assembled quantum dot placed in between two aluminum electrodes separate d by 30 nm. The current-voltage characteristics measured from the devices e xhibit negative differential resistances at temperatures above 77 K. They a re attributed to the 3D-0D-3D resonant tunneling through the InAs self-asse mbled quantum dot. (C) 1999 Elsevier Science B.V. All rights reserved.