Carrier dynamics in double barrier diodes incorporating quantum dots

We investigate carrier dynamics in a n-i-n GaAs/(AlGa)As double barrier res onant tunneling diode in which a layer of InAs self-assembled quantum dots is embedded in the centre of the GaAs well. A combination of photoluminesce nce and electrical measurements on this diode shows that the dot photolumin escence properties depend strongly on bias. In particular, they are affecte d by tunnelling of majority (electrons) and minority (photocreated holes) c arriers through the well. The measurements demonstrate that this type of de vice can be used to induce controlled, resonant changes in the dot photolum inescence as well as to probe the tunnelling process. (C) 1999 Elsevier Sci ence B.V. All rights reserved.