Simulation of Si multiple tunnel junctions

Authors
Muller, HO Williams, DA Mizuta, H Durrani, ZAK Irvine, AC Ahmed, H
Citation
Ho. Muller et al., Simulation of Si multiple tunnel junctions, PHYSICA B, 272(1-4), 1999, pp. 85-87
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
85 - 87
Database
ISI
SICI code
0921-4526(199912)272:1-4<85:SOSMTJ>2.0.ZU;2-V
Abstract
Single electron multiple tunnel junctions (MTJs) provide a useful means of achieving Coulomb blockade effects using silicon technology. A blocking dot model is developed for the simulation of these MTJs. Our simulation uses a single-electron simulator integrated into a SPICE-type conventional circui t simulator, thus allowing for the simulation of Mn-based memory cells. (C) 1999 Elsevier Science B.V. All rights reserved.