Hot electron intervalley transfer in GaAs-AlAs MQWs: population inversion and possibility of intraband lasing

Discussion of different ways to achieve population inversion and IR intraba nd lasing in the hot carrier systems in MQCV structures under lateral trans port and intervalley and (or) real-space transfers is given. Reconsideratio n of the negative differential conductivity under the hot electron interval ley transfer in GaAs in terms of population inversion and indirect low-freq uency optical transitions is presented. Evaluation via the Monte-Carlo simu lation of the hot electron intervalley transfer in GaAs-AlAs MQW structures designed for the amplication at wavelength lambda = 10 mu m and 15 mu m is given. For the structure designed for lambda = 15 mu m the amplification c oefficient over 200 cm(-1) at electric held E = 8 kV/cm and 80 K is found. (C) 1999 Published by Elsevier Science B.V. All rights reserved.