Terahertz lasers using inter-subband transitions in quantum wells: predictions from Monte Carlo simulation

We present the first Monte Carlo device simulations of an inter-subband las er, predicting the possibility of lasing in the far infrared (THz) using em ission from optically pumped GaAs/AlGaAs triple quantum wells from 77 to 30 0 K. The simulations included a full set of electron-phonon and electron-el ectron scattering processes, as well as a realistic model for optical pumpi ng. The THz band has important potential applications in imaging (e.g. medi cal, high-resolution radar) and short-range communications (e.g. wireless o ffice networks). (C) 1999 Elsevier Science B.V. All rights reserved.