Impact ionization of DX--centers in GaAs : Si by hot electrons

Authors
Asche, R Sarbey, OG Wilamowski, Z
Citation
R. Asche et al., Impact ionization of DX--centers in GaAs : Si by hot electrons, PHYSICA B, 272(1-4), 1999, pp. 241-243
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
241 - 243
Database
ISI
SICI code
0921-4526(199912)272:1-4<241:IIODIG>2.0.ZU;2-C
Abstract
The time dependence of the current decrease under the influence of a strong electric field in highly planar doped GaAs:Si can be explained by the form ation of metastable centers and their ionization. An analysis of the experi mental results yields an exponential field dependence for the coefficients of both counteracting processes and allows one to describe the observed cur rent change versus field strength. (C) 1999 Elsevier Science B.V. All right s reserved.