We present a theoretical analysis of the thermal conductivity of charge car
riers in semiconductors under nonequilibrium conditions due to an applied e
lectric field. The theory is based on a correlation-function formalism whic
h directly relates this kinetic coefficient to four spectral densities invo
lving carrier velocity and energy flux fluctuations. Monte Carlo calculatio
ns performed for the cases of p-Si and n-GaAs give an evidence of a strong
dependence of the thermal conductivity on increasing electric fields. (C) 1
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