Generalized transfer-fields and Langevin forces for hot-carrier fluctuations in semiconductor submicron devices

Authors
Starikov, E Shiktorov, P Gruzinskis, V Reggiani, L Varani, L Vaissiere, JC Nougier, JP Gonzalez, T Mateos, J Pardo, D
Citation
E. Starikov et al., Generalized transfer-fields and Langevin forces for hot-carrier fluctuations in semiconductor submicron devices, PHYSICA B, 272(1-4), 1999, pp. 260-262
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
260 - 262
Database
ISI
SICI code
0921-4526(199912)272:1-4<260:GTALFF>2.0.ZU;2-9
Abstract
We present a unifying scheme for the hydrodynamic calculation of electronic noise in semiconductor devices operating under various conditions. In the framework of the Green-function formalism the noise sources corresponding t o the Langevin forces originated by single scattering events are included i nto the equations describing medium properties. The scheme is validated by numerical calculations of the voltage and current noise in submicron n(+)nn (+) GaAs structures. (C) 1999 Elsevier Science B.V. All rights reserved.