Exciton spin relaxation in semiconductor quantum wells: the role of disorder

Authors
Henneberger, F Wunsche, HJ
Citation
F. Henneberger et Hj. Wunsche, Exciton spin relaxation in semiconductor quantum wells: the role of disorder, PHYSICA B, 272(1-4), 1999, pp. 324-327
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
324 - 327
Database
ISI
SICI code
0921-4526(199912)272:1-4<324:ESRISQ>2.0.ZU;2-4
Abstract
On high-quality (Zn,Cd)Se/ZnSe quantum wells we found that the decay of the exciton spin transients after resonant excitation with circularly polarize d light is even faster than the exciton dephasing time. We demonstrate that this fact is a direct consequence of(alloy) disorder, giving rise to a kin d of inhomogeneous broadening and associated interference effects for the s pin dynamics across the band of localized exciton states. (C) 1999 Elsevier Science B.V. All rights reserved.