Coherent control of electron-hole populations in GaAs

Authors
Fraser, JM Shkrebtii, AI Sipe, JE van Driel, HM
Citation
Jm. Fraser et al., Coherent control of electron-hole populations in GaAs, PHYSICA B, 272(1-4), 1999, pp. 353-355
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
353 - 355
Database
ISI
SICI code
0921-4526(199912)272:1-4<353:CCOEPI>2.0.ZU;2-E
Abstract
The electron-hole generation rate in (111)-oriented GaAs is coherently cont rolled through the relative phase of absorbed 1550 and 775 nm, 120 fs pulse s. Quantum interference between single- and two-photon transitions underlie s this process which, in general, only occurs in noncentrosymmetric semicon ductors since macroscopically it is related to a second-order susceptibilit y (chi((2))) (C) 1999 Elsevier Science B.V. All rights reserved.