Femtosecond exciton broadening in ternary II-VI semiconductor quantum wells

Citation
Mc. Netti et al., Femtosecond exciton broadening in ternary II-VI semiconductor quantum wells, PHYSICA B, 272(1-4), 1999, pp. 381-383
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
381 - 383
Database
ISI
SICI code
0921-4526(199912)272:1-4<381:FEBITI>2.0.ZU;2-W
Abstract
Femtosecond exciton dynamics are selectively investigated in a ZnCdSe-ZnSe multiple quantum well at low photoexcited carrier density by means of a two -color absorption saturation technique. Broadening of the exciton lines by the photoexcited carriers is found to dominate the observed nonlinear respo nse, with a carrier distribution dependent dynamics indicating that Pauli e xclusion principle effect plays an important role in ternary quantum well s ystems. On a picosecond time-scale, localized excitons modify the nonlinear response, inducing a frequency shift of the absorption change peak as the system approaches quasiequilibrium. (C) 1999 Published by Elsevier Science B.V. All rights reserved.