Ultrafast carrier-carrier scattering in AlxGa1-xAs/GaAs quantum wells

Authors
Sun, KW Song, TS Sun, CK Wang, JC Wang, SY Lee, CP
Citation
Kw. Sun et al., Ultrafast carrier-carrier scattering in AlxGa1-xAs/GaAs quantum wells, PHYSICA B, 272(1-4), 1999, pp. 387-390
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
387 - 390
Database
ISI
SICI code
0921-4526(199912)272:1-4<387:UCSIAQ>2.0.ZU;2-W
Abstract
We present new time-resolved measurements that demonstrate the effect of in jected carrier densities on carrier-carrier scattering rates of a highly no nequilibrium carrier distribution in the p-doped Al0.32Ga0.68As/GaAs quantu m wells. The initially photoexcited nonthermal carrier distribution is quic kly broadened due to rapid increase of the inelastic carrier-carrier scatte ring as the injected carrier densities increased toward 10(11) cm(-2). (C) 1999 Elsevier Science B.V. All rights reserved.