Influence of hot carrier dynamics on pulse propagation in semiconductor lasers

Citation
M. Kauer et al., Influence of hot carrier dynamics on pulse propagation in semiconductor lasers, PHYSICA B, 272(1-4), 1999, pp. 394-396
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
394 - 396
Database
ISI
SICI code
0921-4526(199912)272:1-4<394:IOHCDO>2.0.ZU;2-3
Abstract
We time resolve the dynamic response of InGaAsP quantum-well semiconductor diode lasers after injection of a femtosecond pulse, using ultrafast upconv ersion. The injection of a single off-resonant pulse leads to a very fast g eneration of picosecond 'dark pulses', which then generate bright pulses ag ain, leading to dark-pulse-bright-pulse oscillations with a change-over per iod of 500 ps. We suggest that nonlinear gain compression causes these osci llations. (C) 1999 Elsevier Science B.V. All rights reserved.