Carrier screening and polarization fields in nitride-based heterostructuredevices

Authors
Della Sala, F Di Carlo, A Lugli, P Cingolani, R Coli, G Lomascolo, M Botchkarev, A Tang, H Morkoc, H
Citation
F. Della Sala et al., Carrier screening and polarization fields in nitride-based heterostructuredevices, PHYSICA B, 272(1-4), 1999, pp. 397-401
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
397 - 401
Database
ISI
SICI code
0921-4526(199912)272:1-4<397:CSAPFI>2.0.ZU;2-F
Abstract
We have shown that free carriers and fixed doping charges can effectively s creen macroscopic spontaneous and piezoelectric polarization fields in nitr ide quantum wells. A rather high sheet density is needed to achieve these c onditions. We also explain the red shifts versus well width and blue shifts versus sheet density observed in the experiments as resulting from the int erplay of carrier screening and polarization fields. (C) 1999 Elsevier Scie nce B.V. All rights reserved.