Hot carrier relaxation in GaN : LO phonon scattering and excitonic effects

Authors
O'Sullivan, ED Hess, S Taylor, RA Cain, NJ Roberts, V Roberts, JS Ryan, JF
Citation
Ed. O'Sullivan et al., Hot carrier relaxation in GaN : LO phonon scattering and excitonic effects, PHYSICA B, 272(1-4), 1999, pp. 402-405
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
402 - 405
Database
ISI
SICI code
0921-4526(199912)272:1-4<402:HCRIG:>2.0.ZU;2-1
Abstract
Hot carrier relaxation has been studied in GaN using femtosecond time-resol ved optical transmission and reflection. A non-thermal electron distributio n with a pronounced "cut-off" at E-LO is observed for up to similar to 3 ps after photoexcitation. Monte Carlo simulations show that this behaviour is due to a remarkably strong electron-LO phonon interaction. Excitonic effec ts are also pronounced and strongly influence the dynamics. (C) 1999 Publis hed by Elsevier Science B.V. All rights reserved.