Energy loss rate of excitons in GaN

Citation
D. Hagele et al., Energy loss rate of excitons in GaN, PHYSICA B, 272(1-4), 1999, pp. 409-411
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
409 - 411
Database
ISI
SICI code
0921-4526(199912)272:1-4<409:ELROEI>2.0.ZU;2-8
Abstract
The cooling of a hot photoexcited exciton distribution in wurtzite GaN is s tudied by time-resolved photoluminescence measurements on the longitudinal optical phonon replicas of the free exciton. The temperature of the exciton s decreases for sample temperatures below 60 K within 150 ps down to the la ttice temperature. The transient temperature is theoretically described in terms of exciton-phonon scattering via an acoustic deformation potential of 13 eV. (C) 1999 Elsevier Science B.V. All rights reserved.