A full band Monte Carlo simulation for electron motion in a GaAs crystal un
der mid-infrared free-electron-laser (FEL) pulses is performed. Average ele
ctron energy and number of occurrence of impact ionization are calculated a
s a function of time for different wave-lengths of FEL pulses. The results
are compared with the experimental observation of band-gap luminescence fro
m a GaAs/AlGaAs asymmetric double-quantum-well structure. (C) 1999 Elsevier
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