Continuous stimulated terahertz emission due to intra-center population inversion in uniaxially strained germanium

Authors
Altukhov, IV Kagan, MS Gousev, YP Sinis, VP Korolev, KA Olsson, HK Galperin, YM Odnoblyudov, MA Yassievich, IN Chao, KA
Citation
Iv. Altukhov et al., Continuous stimulated terahertz emission due to intra-center population inversion in uniaxially strained germanium, PHYSICA B, 272(1-4), 1999, pp. 458-460
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
458 - 460
Database
ISI
SICI code
0921-4526(199912)272:1-4<458:CSTEDT>2.0.ZU;2-8
Abstract
We present study of stimulated THz emission from uniaxially strained Ge at low electric field. The cw regime was reached at electric field below 10 V/ cm. The carrier population inversion is a result of capture and emission of free holes at strain-induced resonant acceptor states. (C) 1999 Elsevier S cience B.V. All rights reserved.