Monte Carlo simulation of hot-electron-induced dielectric breakdown in thin silicon dioxide films

Authors
Kamakura, Y Ishida, A Taniguchi, K
Citation
Y. Kamakura et al., Monte Carlo simulation of hot-electron-induced dielectric breakdown in thin silicon dioxide films, PHYSICA B, 272(1-4), 1999, pp. 532-534
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
532 - 534
Database
ISI
SICI code
0921-4526(199912)272:1-4<532:MCSOHD>2.0.ZU;2-Z
Abstract
Dielectric breakdown of gate oxide films in MOSFETs is studied by using a s ubstrate hot electron (SHE) injection technique. Monte Carlo simulations ar e performed to investigate the correlation between the oxide breakdown and the electron energy. It is demonstrated that the holes generated in the ano de electrode plays an important role in the oxide degradation induced by SH E injection. (C) 1999 Published by Elsevier Science B.V. An rights reserved .