Analysis of electron energy distribution function in ultra-thin gate oxiden-MOSFETs using Monte Carlo simulation for direct tunneling gate current calculation
E. Cassan et al., Analysis of electron energy distribution function in ultra-thin gate oxiden-MOSFETs using Monte Carlo simulation for direct tunneling gate current calculation, PHYSICA B, 272(1-4), 1999, pp. 550-553
Direct tunneling (DT) current through ultra-thin gate oxide of a sub-0.1 mu
m MOSFET is calculated using the semi-classical approximation. The procedu
re consists in coupling the current calculation to 2D device simulation, wh
ose role is to deliver the physical microscopic data necessary to the DT cu
rrent estimation, i.e., the electron energy distribution at the interfaces
and the potential barrier to be tunneled along the gate. We study the influ
ence of drain voltage on gate current by assuming first a uniform gate oxid
e layer. It is shown that the contribution of hot carriers is very small an
d that the maximum of gate current density is located near the source. Then
the oxide thickness fluctuations are taken into account. It is shown that
high current densities run through the oxide layer in the vicinity of weak
points, which is certainly related to the soft breakdown of the ultra-thin
oxide layer. A correct agreement is achieved with experimental results. (C)
1999 Published by Elsevier Science B.V. All rights reserved.