Monte Carlo simulation of conductance characteristics in SOI-MOSFET

Authors
Araya, S Yamasaki, K Ueno, H Mori, N Hamaguchi, C Perron, LM Lacaita, AL
Citation
S. Araya et al., Monte Carlo simulation of conductance characteristics in SOI-MOSFET, PHYSICA B, 272(1-4), 1999, pp. 565-567
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
272
Issue
1-4
Year of publication
1999
Pages
565 - 567
Database
ISI
SICI code
0921-4526(199912)272:1-4<565:MCSOCC>2.0.ZU;2-V
Abstract
Front- and back-channel drain-conductance characteristics of SOI-MOSFETs ar e calculated by performing a Monte Carlo simulation, and the calculated res ults are compared with the experimental results of Perron et al. (Proceedin gs of the ESSDERC '98, 1998, p. 284) in order to extract the roughness para meters of the two interfaces. Effect of image charge in oxide layers in SOI structures is also discussed. (C) 1999 Elsevier Science B.V. All rights re served.