Combined sputter and pulsed laser deposition for preparation of thin YBa2Cu3O7-delta films on buffered silicon substrates

Citation
F. Schmidt et al., Combined sputter and pulsed laser deposition for preparation of thin YBa2Cu3O7-delta films on buffered silicon substrates, PHYSICA C, 327, 1999, pp. 99-103
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
327
Year of publication
1999
Pages
99 - 103
Database
ISI
SICI code
0921-4534(199911)327:<99:CSAPLD>2.0.ZU;2-3
Abstract
For the deposition of epitaxial YBa2Cu3O7-delta (YBCO) on silicon substrate it is necessary to deposit buffer layers. We use sputtered Y-stabilized Zr O2 (YSZ) and CeO2 double layers. Use of sputtering for the deposition of th e buffer layers avoids some disadvantages of the pulsed laser deposition, l ike the effect of droplets, to improve the multilayer technology on silicon with respect to their homogeneity and larger area. The YBCO is ex situ dep osited by pulsed laser deposition. RES and XRD investigations and electrica l measurements were applied for the characterization of the single and mult ilayer films. The correlation between the characterized properties and the used deposition process were analysed. We demonstrate the high quality of t he sputtered buffer layer and the applicability of a combined film depositi on for YBCO devices on silicon substrates. (C) 1999 Elsevier Science B.V. A ll rights reserved.