Novel muonium state in CdS

Citation
Jm. Gil et al., Novel muonium state in CdS, PHYS REV L, 83(25), 1999, pp. 5294-5297
Citations number
9
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
83
Issue
25
Year of publication
1999
Pages
5294 - 5297
Database
ISI
SICI code
0031-9007(199912)83:25<5294:NMSIC>2.0.ZU;2-E
Abstract
A new type of muonium defect center has been observed in undoped CdS below 20 K. The hyperfine interaction amounts only to approximately 10(-4) of the vacuum value, and is shown to have axial symmetry along the Cd-S bond dire ction. Results suggest that the muon is close to the sulfur antibonding sit e and the paramagnetic electron density is distributed over a large volume. In contrast to the behavior in other semiconductors, muonium forms a shall ow center in CdS. By implication, analog isolated hydrogen impurity atoms a ct as electrically active shallow-level defect centers in CdS.