Heterostructure AlGaAs/GaAs light-emitting diodes (LEDs) with a thick activ
e region have shown high external efficiencies, thanks to reabsorption in t
he active region. For high injection currents and low temperature, we repor
t a 22% efficiency which corresponds to a 98% efficiency internally. We dis
cuss the application of such LED when integrated with a quantum-well infrar
ed photodetector for pixelless thermal imaging systems. (C) 2000 American I
nstitute of Physics. [S0003-6951(00)00801-9].