Efficient GaAs light-emitting diodes by photon recycling

Citation
E. Dupont et al., Efficient GaAs light-emitting diodes by photon recycling, APPL PHYS L, 76(1), 2000, pp. 4-6
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
1
Year of publication
2000
Pages
4 - 6
Database
ISI
SICI code
0003-6951(20000103)76:1<4:EGLDBP>2.0.ZU;2-I
Abstract
Heterostructure AlGaAs/GaAs light-emitting diodes (LEDs) with a thick activ e region have shown high external efficiencies, thanks to reabsorption in t he active region. For high injection currents and low temperature, we repor t a 22% efficiency which corresponds to a 98% efficiency internally. We dis cuss the application of such LED when integrated with a quantum-well infrar ed photodetector for pixelless thermal imaging systems. (C) 2000 American I nstitute of Physics. [S0003-6951(00)00801-9].