Electroluminescence of a cubic GaN/GaAs (001) p-n junction

A cubic GaN p-n diode has been grown on n-type GaAs (001) substrates by pla sma assisted molecular epitaxy. For p- and n-type doping, elemental Mg and Si beams have been used, respectively. The optical properties are character ized by photoluminescence at room temperature and 2 K. Current-voltage and capacitance-voltage measurements of the cubic GaN n(+)-p junction are perfo rmed at room temperature. The electroluminescence at 300 K is measured thro ugh a semitransparent Au contact. A peak emission at 3.2 eV with a full wid th at half maximum as narrow as 150 meV is observed, indicating that near-b and edge transitions are the dominating recombination processes in our devi ce. A linear increase of the electroluminescence intensity with increasing current density is measured. (C) 2000 American Institute of Physics. [S0003 -6951(00)03801-8].