Breakdown of the high-voltage sheath in metal plasma immersion ion implantation

Authors
Citation
A. Anders, Breakdown of the high-voltage sheath in metal plasma immersion ion implantation, APPL PHYS L, 76(1), 2000, pp. 28-30
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
1
Year of publication
2000
Pages
28 - 30
Database
ISI
SICI code
0003-6951(20000103)76:1<28:BOTHSI>2.0.ZU;2-I
Abstract
It is suggested that breakdown of a space-charge sheath obeys similar break down laws as known for vacuum breakdown. When metal plasmas of vacuum arcs are used, the sheath between a biased substrate and plasma is very thin and the electric-field strength is very high. Field enhancement (e.g., at shar p edges of the substrate) leads to thermal instability of electron emission centers, followed by dense plasma formation which, in turn, electrically s hort circuits the sheath (breakdown). Theoretical and experimental evidence for this mechanism is presented. (C) 2000 American Institute of Physics. [ S0003-6951(00)02301-9].