Sheet resistance modeling of the Ti/SiO2 system upon high temperature annealing

The reaction of Ti/SiO2 structure at elevated temperatures has been studied by measuring the sheet resistance as a function of annealing temperature f or different initial Ti thicknesses. A sheet resistance model has been deve loped to account for the effects of the thickness and resistivity variation s of the reaction products [Ti(O) and Ti5Si3]. The simulated sheet resistan ce values varying with the Ti5Si3 thickness are in good agreement with the general trend as obtained from the experimental measurements for different initial Ti thicknesses. The approach used in modeling can be applied to oth er thin film structures with similar reaction mechanism to simulate the ove rall sheet resistance variation. (C) 2000 American Institute of Physics. [S 0003-6951(00)02901-6].