Time-resolved photoluminescence in self-assembled InAs/GaAs quantum dots under strictly resonant excitation

We investigate the carrier dynamics in self-assembled InAs/GaAs quantum dot s under strictly resonant excitation of the ground state. The spectral sele ctivity of the resonant excitation allows us to study the physical properti es of a class of dots characterized by an energy distribution comparable to the excitation laser spectrum. We detect no Stokes shift of the photolumin escence (PL) line. The PL decay time yields a straightforward determination of the radiative recombination time. (C) 2000 American Institute of Physic s. [S0003-6951(00)02001-5].