Imaging of acoustic charge transport in semiconductor heterostructures by surface acoustic waves

Citation
M. Streibl et al., Imaging of acoustic charge transport in semiconductor heterostructures by surface acoustic waves, APPL PHYS L, 75(26), 1999, pp. 4139-4141
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
26
Year of publication
1999
Pages
4139 - 4141
Database
ISI
SICI code
0003-6951(199912)75:26<4139:IOACTI>2.0.ZU;2-E
Abstract
We demonstrate room-temperature acoustic charge transport of electrons and holes in an InGaAs/GaAs heterostructure. The carriers are optically generat ed by interband absorption and then separated, stored, and transported in t he piezoelectric potential superlattice of a surface acoustic wave. The cha rge distribution is detected with a spatial resolution of a few acoustic wa velengths by a second orthogonal probe beam, genererated by so-called taper ed transducers. The image information is given as a phase shift signal in f requency space and allows for the direct comparison of the number of genera ted and transported carriers. Regions of mere carrier drag and full carrier capture and transport are observed simultaneously. (C) 1999 American Insti tute of Physics. [S0003-6951(99)01252-8].