Njc. Ingle et al., The generation and detection of high flux atomic oxygen for physical vapordeposition thin film growth, APPL PHYS L, 75(26), 1999, pp. 4162-4164
The growth of many epitaxial thin-film oxides is significantly enhanced wit
h the use of an oxidizing agent such as atomic oxygen, ozone, or NO2. We de
veloped a flow-through microwave plasma source to generate large atomic oxy
gen fluxes while maintaining vacuum pressures of less that 1 x 10(-4) Torr.
Continuous and real-time detection of the atomic oxygen was achieved by at
omic absorption of the 130 nm atomic oxygen lines. Atomic oxygen fluxes of
at least 1.4 x 10(18) atoms/cm(2) s and dissociation efficiencies of around
100% were obtained. (C) 1999 American Institute of Physics. [S0003-6951(99
)00952-3].