The generation and detection of high flux atomic oxygen for physical vapordeposition thin film growth

Citation
Njc. Ingle et al., The generation and detection of high flux atomic oxygen for physical vapordeposition thin film growth, APPL PHYS L, 75(26), 1999, pp. 4162-4164
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
26
Year of publication
1999
Pages
4162 - 4164
Database
ISI
SICI code
0003-6951(199912)75:26<4162:TGADOH>2.0.ZU;2-U
Abstract
The growth of many epitaxial thin-film oxides is significantly enhanced wit h the use of an oxidizing agent such as atomic oxygen, ozone, or NO2. We de veloped a flow-through microwave plasma source to generate large atomic oxy gen fluxes while maintaining vacuum pressures of less that 1 x 10(-4) Torr. Continuous and real-time detection of the atomic oxygen was achieved by at omic absorption of the 130 nm atomic oxygen lines. Atomic oxygen fluxes of at least 1.4 x 10(18) atoms/cm(2) s and dissociation efficiencies of around 100% were obtained. (C) 1999 American Institute of Physics. [S0003-6951(99 )00952-3].