Deposition of thin films of gallium sulfide from a novel single-source precursor, Ga(S(2)CNMeHex)(3), by low-pressure metal-organic chemical vapor deposition

Authors
Lazell, MR O'Brien, P Otway, DJ Park, JH
Citation
Mr. Lazell et al., Deposition of thin films of gallium sulfide from a novel single-source precursor, Ga(S(2)CNMeHex)(3), by low-pressure metal-organic chemical vapor deposition, CHEM MATER, 11(12), 1999, pp. 3430
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMISTRY OF MATERIALS
ISSN journal
08974756 → ACNP
Volume
11
Issue
12
Year of publication
1999
Database
ISI
SICI code
0897-4756(199912)11:12<3430:DOTFOG>2.0.ZU;2-4
Abstract
Polycrystalline (alpha-Ga2S3 films have been prepared from tris(N,N-methylh exyldithiocarbamato)gallium(III), Ga(S(2)CNMeHex)(3), by LP-MOCVD. The film s were grown from 475 to 500 degrees C on GaAs(111) single-crystal substrat es and characterized by XPS, EDAX, SEM, and XRD. XPS analysis shows only ga llium and sulfur peaks are present. These studies demonstrate that dithioca rbamate compounds are attractive single-source precursors for the depositio n of metal sulfide thin films.