Modeling of the kinetics in copper chemical vapor deposition from Cu(hfac)VTMS

A new model is used to describe the surface kinetics in copper chemical vap or deposition from Cu(hfac)VTMS. This model is based on nonequilibria. It p rovides a mechanism that satisfactorily describes the kinetics. In this mec hanism, next to the disproportional growth reaction, a parallel reduction r eaction is proposed, which accounts for the observed growth-rate enhancemen t by hydrogen. The new model is herein more convenient than a conventional Langmuir-type model. The reaction-rate coefficients of all reactions in the mechanism are calculated. The *VTMS desorption appears to be fast. The rea ctions involving a Cu(hfac)VTMS dissociation have a low reaction-rate const ant. Both observations confirm results reported by several other authors.