Heterogeneous integration of visible AlGaInP and infrared AlInGaAs lasers with GaN-based light sources

Arrays of integrated red, infrared and blue light emitters fabricated using wafer fusion of GaAs-based laser structures to GaN-based light-emitting di ode (LED) heterostructures are demonstrated. Successful operation of red an d infrared lasers fused to functioning GaN LEDs has been achieved. Infrared , AlGaInAs QW lasers (4 x 500 mu m) operating with a threshold current (I-t h) of 30mA and external differential quantum efficiency (eta(d)) of 11.5%/f acet at similar to 821 nm are shown. Red, GaInP QW lasers (4 x 500 mu m) op erating with an I-th of 118mA and eta(d) of 18.7%/facet at similar to 660nm are also shown. The adjacent InGaN/GaN LED emits at 446nm.