Gate recessing of GaN MESFETs using photoelectrochemical wet etching

For the first time GaN-based MESFETs which have been recessed using a wet e tching process are presented. Photoelectrochemical etching was used to rece ss openings through the heavily-doped n-GaN cap and into the n-GaN channel. The DC and RF characteristics of recessed-gate GaN MESFETs are presented.