Thin film SiGe heterostructure coolers have been Fabricated and characteris
ed. Cooling by as much as 1.1K at room temperature and 1.6K at a substrate
temperature of 70 degrees C over a 3 mu m Si/SiGe superlattice barrier has
bhn measured. This corresponds to cooling power densities of hundreds of wa
tts per square centimetre.