LATERAL DEVELOPMENT OF ELECTRON SHOWERS MEASURED BY SILICON MICROSTRIP DETECTORS

Authors
CHANG YH CHEN AE HOU SR HUANG KT LIN CH LIN WT
Citation
Yh. Chang et al., LATERAL DEVELOPMENT OF ELECTRON SHOWERS MEASURED BY SILICON MICROSTRIP DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 388(1-2), 1997, pp. 135-143
Citations number
21
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
388
Issue
1-2
Year of publication
1997
Pages
135 - 143
Database
ISI
SICI code
0168-9002(1997)388:1-2<135:LDOESM>2.0.ZU;2-5
Abstract
We present a study of lateral shower profiles using granular silicon m icrostrip detectors for electrons of momenta from 2 to 50 GeV. The abs orbers used are lead, copper and tungsten from 0.5 to 4X(0). The measu rements of lateral shower spectra and shower multiplicities are compar ed to full GEANT simulations.